Low-Voltage to Medium-Voltage Silicon MOSFET Design Engineer

Job Summary

We are seeking a highly skilled and innovative Low-Voltage to Medium-Voltage Silicon MOSFET Design Engineer

to join our advanced technology development team. In this role, you will be responsible for the architecture, design, simulation, and optimization of next-generation power silicon MOSFETs, with a primary focus on shielded gate structures. Leveraging your deep expertise in semiconductor device physics and the Synopsys TCAD platform, you will drive innovations in device architecture to improve performance metrics such as Rds(on), switching losses, and ruggedness. You will collaborate closely with process integration, characterization, and product engineering teams to bring high-performance discrete power devices from concept to high-volume manufacturing.

Core Responsibilities

• Shielded Gate Design & Architecture: Drive the architecture and optimization of low-voltage to medium-voltage silicon power MOSFETs, focusing heavily on advanced shielded gate trench structures to achieve industry-leading specific on-resistance and switching figures of merit (FOM).


• Synopsys TCAD Simulation: Utilize the Synopsys TCAD platform (Sentaurus) to perform extensive 2D/3D process and device simulations, predicting electrical characteristics, breakdown voltage, charge-balance optimization, and thermal behavior.


• Layout & Mask Design: Define layout design rules, create device structures, and collaborate with layout engineers to generate mask layouts for prototype fabrication.


• Cross-Functional Collaboration: Partner with process integration engineers to define process flows, design rules, and process variations, ensuring design manufacturability and high yield.


• Characterization & Validation: Analyze electrical test data from inline monitoring, parametric testing (PCM), and lab characterization to validate Synopsys TCAD models and troubleshoot device performance or reliability issues.

Required Qualifications

• Education: Ph.D. in Electrical Engineering, Semiconductor Sciences, Materials Science, or a closely related discipline, with a research focus directly tied to power semiconductor devices.


• Experience: 3+ years of post-degree industrial or advanced academic research experience in silicon power MOSFET design and development.


• Device Physics Expertise: Deep theoretical understanding of semiconductor device physics, carrier transport, breakdown mechanisms, and power MOSFET dynamics (UIS, safe operating area, switching behavior).


• Advanced TCAD Skills: Proven expertise using the Synopsys TCAD suite for comprehensive process integration emulation and electrical device characterization.


• Problem-Solving & Communication: Strong analytical skills to diagnose complex device-level anomalies, paired with excellent communication skills to present technical data across multi-functional engineering teams.

Preferred Qualifications

• Experience with discrete power packaging technologies and their impact on device parasitic elements.


• Familiarity with reliability mechanisms specific to shielded gate power devices, such as shield oxide integrity, electromigration, and high-temperature stress testing (HTGB/HTRB).


• Knowledge of power electronics applications to better align device specifications with system-level requirements.