Recentadvances provide a path forward. By using NbTiN/α-Si/NbTiN junction stacksfabricated through a semi-damascene process on 300mm wafers, itis now possible to achieve critical current densities of approximately 2-3mA/µm² and junction dimensions as small as 210nm. These improvements significantly enhancescalability and enable the creation of more compact, efficient superconductingcircuit architectures.
Theaim of this work is to establish a clear relationship between CIPT-extractedbarrier properties on blanket JJ structures and the electrical behaviorof fully fabricated junctions. By tracking how the resistance-area (RA)product evolves from blanket measurements to device-level results, theproject will uncover which fabrication steps most strongly influence junctionperformance. This comparison will help identify process-sensitive stagesthat introduce variability-or, alternatively, demonstrate that the junctionsremain robust and consistent throughout the entire fabrication flow.
Type of internship: Bachelor internship
Duration: 3 months
Required educational background: Physics, Computer Science
Supervising scientist(s): For further information or for application, please contact Daniel Perez Lozano (< email deleted for security reasons >)
The reference code for this position is 2026-INT-077. Mention this reference code in your application.
Only for self-supporting students.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.