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Therapid growth of AI-driven applications today is pushing conventionalcharge-based memory technologies to their limits due to the concerns inreliability, scalability, and volatility. This pushes a pressing need foralternative memory solutions that offer faster operation, higher endurance, andnon-volatile data storage.
Spintronics,which leverages the electron's spin in addition to its charge, offers apromising pathway for next-generation memory technologies. MagneticRandom-Access Memory (MRAM) combines these advantages, offering high enduranceand fast read/write speeds, making it a strong candidate for future memorytechnologies. A leading MRAM technology, Spin-Transfer-Torque MRAM (STT-MRAM)is a fast, non-volatile memory that is currently developing for applicationslike cache memory, and Internet of Thing devices. While it offers high speed,the large currents required for writing can limit device reliability,highlighting the need for improved memory technologies.
Toaddress the limitations of conventional MRAM, Spin-Orbit Torque MRAM (SOT-MRAM)has emerged as a promising alternative. In SOT-MRAM, magnetization switching isinduced by an electrical current flowing through an adjacent heavy metal layer,enabling a separation between the write and read paths. This architectureenables faster switching and improved reliability, making SOT-MRAM a promisingcandidate for future high-performance and energy-efficient memory systems [1].However, operation of SOT-MRAM devices requires an external in-plane magneticfield to induce reliable magnetization switching. This requirement limitspractical device application. As a result, significant research efforts havefocused on achieving field-free switching through material design or new devicearchitecture. At imec, we have demonstrated anintegration-friendly approach by embedding an in-plane Cobalt ferromagnet inthe hard mask used to shape the SOT track during device fabrication process.This Cobalt magnetic hard mask generates an in-plane stray field large enoughto induce magnetization switching SOT MRAM memory element without the need ofexternal magnetic field. However, the impact of the in-plane magneticconfiguration of Co on the switching dynamics of SOT-MRAM has not yet beenthoroughly explored. Studying this relationship will help to connect magnetic behavioursto device performance and guide the development of future high-performancespintronic memory devices.
Therefore, the aim of this internship is to explorethe use of advanced scanning probe microscopy (SPM)-based magnetic imagingtechniques to probe the in-plane magnetic configuration of Cobalt layers andstudy its correlation with the switching behaviours of SOT-MRAM devices.Specifically, the main focus will be on scanning nitrogen-vacancy magnetometry(SNVM), a technique that allows for highly sensitive, quantitative mapping ofmagnetic stray fields with nanoscale spatial resolution. Indeed, recent collaborationbetween imec and Qnami has showcased the successful application of SNVM forcharacterization of individual MRAM bits without disturbing the device. [2]. Thistechnique supports probing magnetic uniformity of memory cell beyondconventional methods, offering a powerful tool for optimizing MRAM performanceand advancing next-generation memory technologies.
Bydirectly visualizing magnetic domain states, this internship project will gaina deep understanding of how nanoscale magnetic state influence real deviceperformance, bridging fundamental physics and practical memory operation. We seek a candidate with a physics orengineering background, a strong interest in experimental work, and a passionfor cutting-edge science and technology, particularly in the fast-growing areaof memory technology.
References:
2. https://www.nature.com/articles/s44306-024-00016-5
Type of internship: Master internship
Duration: 9 months
Required educational background: Materials Engineering, Physics
University promotor: Claudia Fleischmann (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Van Dai Nguyen ([email protected]) and Nemanja Peric ([email protected])
The reference code for this position is 2026-INT-062. Mention this reference code in your application.
Imec allowance will be provided for students studying at a non-Belgian university.
Applications should include the following information:
Incomplete applications will not be considered.
Spintronics,which leverages the electron's spin in addition to its charge, offers apromising pathway for next-generation memory technologies. MagneticRandom-Access Memory (MRAM) combines these advantages, offering high enduranceand fast read/write speeds, making it a strong candidate for future memorytechnologies. A leading MRAM technology, Spin-Transfer-Torque MRAM (STT-MRAM)is a fast, non-volatile memory that is currently developing for applicationslike cache memory, and Internet of Thing devices. While it offers high speed,the large currents required for writing can limit device reliability,highlighting the need for improved memory technologies.
Toaddress the limitations of conventional MRAM, Spin-Orbit Torque MRAM (SOT-MRAM)has emerged as a promising alternative. In SOT-MRAM, magnetization switching isinduced by an electrical current flowing through an adjacent heavy metal layer,enabling a separation between the write and read paths. This architectureenables faster switching and improved reliability, making SOT-MRAM a promisingcandidate for future high-performance and energy-efficient memory systems [1].However, operation of SOT-MRAM devices requires an external in-plane magneticfield to induce reliable magnetization switching. This requirement limitspractical device application. As a result, significant research efforts havefocused on achieving field-free switching through material design or new devicearchitecture. At imec, we have demonstrated anintegration-friendly approach by embedding an in-plane Cobalt ferromagnet inthe hard mask used to shape the SOT track during device fabrication process.This Cobalt magnetic hard mask generates an in-plane stray field large enoughto induce magnetization switching SOT MRAM memory element without the need ofexternal magnetic field. However, the impact of the in-plane magneticconfiguration of Co on the switching dynamics of SOT-MRAM has not yet beenthoroughly explored. Studying this relationship will help to connect magnetic behavioursto device performance and guide the development of future high-performancespintronic memory devices.
Therefore, the aim of this internship is to explorethe use of advanced scanning probe microscopy (SPM)-based magnetic imagingtechniques to probe the in-plane magnetic configuration of Cobalt layers andstudy its correlation with the switching behaviours of SOT-MRAM devices.Specifically, the main focus will be on scanning nitrogen-vacancy magnetometry(SNVM), a technique that allows for highly sensitive, quantitative mapping ofmagnetic stray fields with nanoscale spatial resolution. Indeed, recent collaborationbetween imec and Qnami has showcased the successful application of SNVM forcharacterization of individual MRAM bits without disturbing the device. [2]. Thistechnique supports probing magnetic uniformity of memory cell beyondconventional methods, offering a powerful tool for optimizing MRAM performanceand advancing next-generation memory technologies.
Bydirectly visualizing magnetic domain states, this internship project will gaina deep understanding of how nanoscale magnetic state influence real deviceperformance, bridging fundamental physics and practical memory operation. We seek a candidate with a physics orengineering background, a strong interest in experimental work, and a passionfor cutting-edge science and technology, particularly in the fast-growing areaof memory technology.
References:
- https://www.nature.com/articles/s44306-024-00044-1
2. https://www.nature.com/articles/s44306-024-00016-5
Type of internship: Master internship
Duration: 9 months
Required educational background: Materials Engineering, Physics
University promotor: Claudia Fleischmann (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Van Dai Nguyen ([email protected]) and Nemanja Peric ([email protected])
The reference code for this position is 2026-INT-062. Mention this reference code in your application.
Imec allowance will be provided for students studying at a non-Belgian university.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
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