Integrated photonics based on silicon nitride (SiN) has maturedsignificantly, offering ultra-low-loss waveguides and broad spectraltransparency. However, the current SiN platform lacks native activefunctionalities such as photodetectors and light sources. To achieve fullyintegrated photonic systems, heterogeneous integration of additional materials suchas III-V semiconductors and lithium niobate (LNO) is essential.
LNO is particularly promising due to its strong Pockels effect, enablinghighly efficient electro-optic phase shifting and high-speed modulation. AfterLNO is integrated onto SiN through micro-transfer printing or wafer bonding,subsequent processing steps, including metallization, typically requireelevated temperatures and mechanical stresses. These conditions can cause lithiumdiffusion into other layers.
Since SiN waveguides lie adjacent to the bonded LNO, lithium diffusion mayalter the refractive index or absorption behaviour of the waveguide stack,potentially increasing propagation loss in otherwise ultra-low-loss photoniccircuits.
This internship aims to systematically investigate the impact of lithiumdiffusion under various post-processing conditions on SiN waveguideperformance. The work will involve:
The outcome will help establish optimized integration and processingschemes for next-generation electro-optic LNO modulators integrated in SiNphotonic platforms.
Type of internship: Master internship, PhD internship
Duration: 6 months
Required educational background: Physics, Electrotechnics/Electrical Engineering
University promotor: Bart Kuyken (UGent)
Supervising scientist(s): For further information or for application, please contact Sandeep Seema Saseendran ([email protected]) and Jon Kjellman ([email protected]) and Zeinab Jafari ([email protected])
The reference code for this position is 2026-INT-082. Mention this reference code in your application.
Imec allowance will be provided.
Applications should include the following information:
Incomplete applications will not be considered.
LNO is particularly promising due to its strong Pockels effect, enablinghighly efficient electro-optic phase shifting and high-speed modulation. AfterLNO is integrated onto SiN through micro-transfer printing or wafer bonding,subsequent processing steps, including metallization, typically requireelevated temperatures and mechanical stresses. These conditions can cause lithiumdiffusion into other layers.
Since SiN waveguides lie adjacent to the bonded LNO, lithium diffusion mayalter the refractive index or absorption behaviour of the waveguide stack,potentially increasing propagation loss in otherwise ultra-low-loss photoniccircuits.
This internship aims to systematically investigate the impact of lithiumdiffusion under various post-processing conditions on SiN waveguideperformance. The work will involve:
- Thermal and mechanical post-processing of LNO under controlled conditions
- Waveguide loss measurements and correlation with process parameters
The outcome will help establish optimized integration and processingschemes for next-generation electro-optic LNO modulators integrated in SiNphotonic platforms.
Type of internship: Master internship, PhD internship
Duration: 6 months
Required educational background: Physics, Electrotechnics/Electrical Engineering
University promotor: Bart Kuyken (UGent)
Supervising scientist(s): For further information or for application, please contact Sandeep Seema Saseendran ([email protected]) and Jon Kjellman ([email protected]) and Zeinab Jafari ([email protected])
The reference code for this position is 2026-INT-082. Mention this reference code in your application.
Imec allowance will be provided.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
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