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Superconductingcomputing technologies based on Josephson junctions (JJs) offer apromising route toward ultra-fast and energy-efficient processors, farsurpassing the limits of conventional CMOS transistor-based CPUs. However,state-of-the-art Nb-based JJs face critical scalability barriers,including limited critical current density (Jc < 1 mA/µm²),relatively large device dimensions (>250 nm), low kinetic inductance, and arestricted thermal budget (~200 °C) that hinders integration with CMOS-compatibleprocesses.
Toovercome these limitations, recent developments have demonstrated NbTiN/α-Si/NbTiN Josephson junctionsfabricated using a semi-damascene process on 300mm wafers,achieving Jc ≈ 2-3mA/µm² and critical dimensions down to 210nm, enabling denser and lower-loss superconductingcircuits.
A keychallenge for further technology scaling is understanding and controlling electricalvariability arising from the tunnel barrier, where barrierthickness fluctuations, roughness, and local composition variationsdirectly affect junction resistance, and device reproducibility.
Thegoal of this bachelor project is to investigate how deposition parametersimpact the morphology of the α-Si-basedJJ barrier. By analyzing TEM and EDS cross-sectional images fromdifferently processed samples, we aim for:
Thisproject provides hands-on experience with advanced nanoscale characterizationtechniques, materials analysis, and structure-property relationships insuperconducting devices contributing to the continued scaling of high-performanceJJ-based computing technologies.
Type of internship: Bachelor internship
Duration: 3 months
Required educational background: Physics, Computer Science
Supervising scientist(s): For further information or for application, please contact Daniel Perez Lozano (< email deleted for security reasons >)
The reference code for this position is 2026-INT-075. Mention this reference code in your application.
Only for self-supporting students.
Applications should include the following information:
Incomplete applications will not be considered.
Toovercome these limitations, recent developments have demonstrated NbTiN/α-Si/NbTiN Josephson junctionsfabricated using a semi-damascene process on 300mm wafers,achieving Jc ≈ 2-3mA/µm² and critical dimensions down to 210nm, enabling denser and lower-loss superconductingcircuits.
A keychallenge for further technology scaling is understanding and controlling electricalvariability arising from the tunnel barrier, where barrierthickness fluctuations, roughness, and local composition variationsdirectly affect junction resistance, and device reproducibility.
Thegoal of this bachelor project is to investigate how deposition parametersimpact the morphology of the α-Si-basedJJ barrier. By analyzing TEM and EDS cross-sectional images fromdifferently processed samples, we aim for:
- Quantify barrier thickness, interface roughness, and material uniformity.
- Identify correlations between process conditions and morphological variations.
- Develop a phenomenological model that predicts electrical variability as a function of deposition parameters.
Thisproject provides hands-on experience with advanced nanoscale characterizationtechniques, materials analysis, and structure-property relationships insuperconducting devices contributing to the continued scaling of high-performanceJJ-based computing technologies.
Type of internship: Bachelor internship
Duration: 3 months
Required educational background: Physics, Computer Science
Supervising scientist(s): For further information or for application, please contact Daniel Perez Lozano (< email deleted for security reasons >)
The reference code for this position is 2026-INT-075. Mention this reference code in your application.
Only for self-supporting students.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
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