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The performance of nano-electronic devices, such as transistors in computer chips and memory devices, can be improved by introducing novel materials with enhanced properties. Creating nano-engineered thin films with well controlled structure and properties implies that one wants to assemble films with atomic growth control. We therefore investigate the surface reactions and growth mechanisms during thin film deposition. The following research topics are open for master thesis students:
Area-selective deposition (ASD): a bottom-up technique for creating nanoscale structures: ASD holds great potential to complement traditional patterning for the fabrication of nano-electronic devices. In ASD, material is deposited only where needed according to a predefined pattern, with no deposition on the rest of the surface. ASD is a sustainable and cost-effective approach that requires less chemical products and energy as compared to traditional top-down patterning. Nevertheless, industrial applications of ASD are currently limited, because only few materials can be deposited with high selectivity. We therefore investigate the growth and nucleation mechanisms of Atomic Layer Deposition and Chemical Vapor Deposition and apply the insight to design novel ASD processes. Contact: [email protected]
Two-dimensional (2D) transition metal dichalcogenides (MX2, with M a transition metal of group 4-7 and X a chalcogen) have versatile properties that complement or even supersede those of graphene, the most well-known representative of the 2D materials. The semiconducting 2D materials (e.g. MoS2 or WSe2) are investigated as for future-generations semiconductor devices. We investigate deposition methods for MX2 materials with well controlled 2D structure, number of layers and properties by Atomic Layer Deposition and Chemical Vapor Deposition, and deposition of high-k dielectric layers on 2D materials. Contact: [email protected]
Atomic Layer Deposition (ALD) is of interest because its deposition principle ensures growth control at the atomic level. This originates from the use of self-limiting surface reactions of gas phase precursors with a substrate. Today, hundreds of ALD chemistries have been developed for many materials and ALD is being used during the industrial production of nano-electronic devices. There are however still challenges related to ALD of specific materials, for example chalcogenides for application in memory devices, ALD of IIIV materials, or ALD on EUV resists. We therefore investigate the growth and nucleation mechanisms during Atomic Layer Deposition by experimental investigations. Contact: [email protected]
Type of internship: Master internship
Duration: 9 months
Required educational background: Chemistry/Chemical Engineering
University promotor: Annelies Delabie (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Annelies Delabie ([email protected])
The reference code for this position is 2026-INT-090. Mention this reference code in your application.
Only for self-supporting students.
Applications should include the following information:
Incomplete applications will not be considered.
Area-selective deposition (ASD): a bottom-up technique for creating nanoscale structures: ASD holds great potential to complement traditional patterning for the fabrication of nano-electronic devices. In ASD, material is deposited only where needed according to a predefined pattern, with no deposition on the rest of the surface. ASD is a sustainable and cost-effective approach that requires less chemical products and energy as compared to traditional top-down patterning. Nevertheless, industrial applications of ASD are currently limited, because only few materials can be deposited with high selectivity. We therefore investigate the growth and nucleation mechanisms of Atomic Layer Deposition and Chemical Vapor Deposition and apply the insight to design novel ASD processes. Contact: [email protected]
Two-dimensional (2D) transition metal dichalcogenides (MX2, with M a transition metal of group 4-7 and X a chalcogen) have versatile properties that complement or even supersede those of graphene, the most well-known representative of the 2D materials. The semiconducting 2D materials (e.g. MoS2 or WSe2) are investigated as for future-generations semiconductor devices. We investigate deposition methods for MX2 materials with well controlled 2D structure, number of layers and properties by Atomic Layer Deposition and Chemical Vapor Deposition, and deposition of high-k dielectric layers on 2D materials. Contact: [email protected]
Atomic Layer Deposition (ALD) is of interest because its deposition principle ensures growth control at the atomic level. This originates from the use of self-limiting surface reactions of gas phase precursors with a substrate. Today, hundreds of ALD chemistries have been developed for many materials and ALD is being used during the industrial production of nano-electronic devices. There are however still challenges related to ALD of specific materials, for example chalcogenides for application in memory devices, ALD of IIIV materials, or ALD on EUV resists. We therefore investigate the growth and nucleation mechanisms during Atomic Layer Deposition by experimental investigations. Contact: [email protected]
Type of internship: Master internship
Duration: 9 months
Required educational background: Chemistry/Chemical Engineering
University promotor: Annelies Delabie (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Annelies Delabie ([email protected])
The reference code for this position is 2026-INT-090. Mention this reference code in your application.
Only for self-supporting students.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
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