[NanoIC topic] Novel materials for magnetic tunnelling junctions towards high-performance MRAM devic

Background and Motivation:

The rapid growth of artificial intelligence (AI), edge computing, anddata-intensive applications has created a strong demand for fast,energy-efficient, and scalable memory technologies. Conventional memorysolutions such as SRAM, DRAM, and Flash increasingly face limitations relatedto power consumption, scalability, and performance. Magnetic Random AccessMemory (MRAM) has emerged as a promising next-generation non-volatile memorytechnology due to its low latency, high endurance, non-volatility, and compatibilitywith CMOS processes. Despite these advantages, MRAM technologies, regardless ofthe employed switching mechanisms such as spin-transfer torque (STT),spin-orbit torque (SOT), or voltage-control of magnetic anisotropy (VCMA), continueto face challenges including high switching energy and reliability issues.These limitations are strongly linked to material quality, interfaceproperties, and scattering mechanisms within Magnetic Tunnelling Junctions(MTJs), which form the fundamental building blocks of MRAM devices. Thismaster's thesis proposes a materials-driven approach to address thesechallenges by focusing on the development of novel materials for MTJs, such asFePd, FePt, RuAl. By exploring new material systems and improving crystallinequality, highly crystalline MTJs can reduce scattering during read and writeoperations and enhance the tunnelling magnetoresistance (TMR) ratio. Developinghigh-performance MTJs that are compatible with standard MRAM fabricationprocesses is expected to accelerate MRAM commercialization and support theevolving needs of the semiconductor industry.

Objectives of the Thesis:

The main objective of this thesis is to investigate and optimize MTJ thin filmsfor MRAM applications through an in-depth materials and process study. Thespecific objectives are:

• To develop a thorough understanding of magnetron sputtering processes used for magnetic thin-film deposition.
• To study and optimize the growth of thin film with improved crystallinity and interface quality.
• To establish correlations between structural and compositional properties and magnetic performance metrics such as anisotropy, coercivity, and TMR.
• To contribute material and process insights relevant for scaling MTJ fabrication toward 300 mm industrial deposition tools.

Experimental Methodology:

The experimental work will be carried out in imec, providing access tostate-of-the-art industrial research facilities. Exploratory thin film for MTJstacks will be deposited using advanced magnetron sputtering systems dedicatedto materials research. Emphasis will be placed on controlling depositionparameters and understanding their influence on growth and interface formation.

Structural and compositional characterization of thedeposited thin films will be performed using imec's extensive suite ofanalytical techniques such as XRD, AFM, enabling detailed analysis ofcrystallography, composition, and interfaces. Magnetic characterization will beconducted using advanced measurement techniques like VSM, FMR and CIPT toevaluate key magnetic properties. The magnetic results will be systematicallycorrelated with the structural and interfacial characteristics of the exploratoryMTJs.

Expected Outcomes and Impact:

This thesis is expected to provide a deeper understanding of the relationshipbetween sputtering conditions, crystalline quality, and magnetic performance inmagnetic thin film in MTJs. The results will help identify material andinterface engineering strategies to enhance TMR and reduce switching energy.The findings will support imec's ongoing MRAM research efforts and contributeto the development of scalable, reliable, and high-performance MRAMtechnologies compatible with industrial manufacturing.

Skills and KnowledgeDevelopment:

During this master's thesis, the student will develop:

• In-depth knowledge of magnetron sputtering processes and magnetic materials.
• Expertise in crystallographic, compositional, and interface analysis of sputtered thin films.
• A detailed understanding of magnetic characterization techniques and their correlation with structural properties.

Type of internship: Master internship

Duration: 6 - 9 months

Required educational background: Nanoscience & Nanotechnology

University promotor: Clement Merckling (KU Leuven)

Supervising scientist(s): For further information or for application, please contact Hannah Tran ([email protected]) and Giacomo Talmelli ([email protected])

The reference code for this position is 2026-INT-083. Mention this reference code in your application.

Only for self-supporting students.

Applications should include the following information:

• resume
• motivation
• current study

Incomplete applications will not be considered.