Senior Power FET Development Engineer

onsemi is seeking a Power Device Engineer (MTS/SMTS Engineer in our Hopewell Junction, NY, site to join our Power Technology Development team and lead the advancement of innovative discrete power MOSFET and FET technologies. This is a highly visible technical role offering the opportunity to influence technology strategy, drive product innovation, and work alongside some of the industry's leading device experts.

Responsibilities:

As a key contributor to our technology development team, you will:

• Lead the development of next-generation discrete power MOSFET technologies from concept through qualification and production ramp.


• Define device architectures and electrical performance targets focused on improving: 
  
  
  
  • RDS(on)
  
  
  • Switching efficiency
  
  
  • Power density
  
  
  • Ruggedness and reliability
  
  


• Drive device simulation, modeling, characterization, and silicon validation activities.


• Collaborate closely with process integration, manufacturing, product engineering, packaging, reliability, and applications teams to deliver innovative power device solutions.


• Analyze electrical data, yield trends, and reliability results to identify opportunities for performance improvement.


• Solve challenging device and process integration issues using data-driven methodologies, including DOE, SPC, FMEA, and Six Sigma techniques.


• Partner with fabrication teams to optimize process windows and ensure robust manufacturability.


• Support technology roadmaps and evaluate emerging device concepts in power MOSFET, Super Junction, SiC, and GaN technologies.


• Contribute to patents, invention disclosures, and technical publications that expand onsemi's technology leadership.


• Mentor engineers, provide technical leadership, and help grow the next generation of power semiconductor innovators.

Qualifications:

• BS, MS, or PhD in Electrical Engineering, Physics, Materials Science, or a related technical field.


• Experience developing semiconductor devices, with emphasis on: 
  
  
  
  • Power MOSFETs
  
  
  • Trench MOSFETs
  
  
  • Super Junction devices
  
  
  • Other discrete power technologies
  
  


• Strong understanding of: 
  
  
  
  • Semiconductor device physics
  
  
  • Device reliability
  
  
  • Semiconductor manufacturing processes
  
  


• Experience moving new technologies from development through qualification and volume production.


• Knowledge of wafer fabrication, wafer probe, electrical characterization, and device testing.


• Experience with data-driven problem solving and statistical analysis techniques.


• Ability to independently drive technical projects and influence cross-functional teams.


• Strong written and verbal communication skills.

Preferred Skills

High-voltage and high-current power device development. 

300mm semiconductor manufacturing environments. 

TCAD, SPICE, electro-thermal, or compact modeling tools. 

Wafer-level test, WAT, PCM, probe, and final test methodologies. 

Packaging technologies for discrete power devices, including: 

• DFN


• TO packages


• Copper clip packages


• Power modules

AEC-Q101 automotive qualification and reliability testing. 

SiC and GaN power semiconductor technologies. 

Statistical analysis tools such as JMP, Python, or MATLAB. 

Patent development and technology innovation experience.

Salary: onsemi is excited to share the base salary range for this position is $147,000 to $250,000 exclusive of fringe benefits or potential bonuses. The final pay rate for the successful candidate will depend on geographic location, skills, education, experience, and/or consideration of internal equity of our current team members. We also offer a competitive benefits package. https://www.onsemi.com/site/pdf/Benefits-Summary-USA.pdf