Job Description Summary

Job Description

GE Aerospace Research is looking for an intern to join the Device & Fabrication technology organization. As a Semiconductor Device Fellow Intern in Digital & Electrical Systems, you will have the opportunity to engage in the development and evaluation of ultra wide bandgap semiconductor device technology (diamond, Ga2O3) which may include device characterization, modeling, and/or process development.  Assignments include working side by side with experts in the field of WBG and UWBG semiconductors, completing challenging technical projects, applying theoretical knowledge to real-life technical problems, and developing skills in a cutting edge global industrial research environment. 

At GE Aerospace Research, scientists, engineers, and technicians are dedicated to pushing the boundaries of aerospace technology and innovation.  Our commitment to Safety, Quality, Delivery, and Cost (SQDC) drives everything we do, ensuring that we deliver the highest standards in the industry.  An internship with us will provide valuable hands-on experience to help you launch your career in industrial research.  Intern assignments are typically for 12-14 weeks; working side by side with experts in the field of systems engineering, completing challenging technical projects and applying theoretical knowledge to real-life technical problems.  This program includes seminars on cross-center technology and soft skills development as well as opportunities for networking and showcasing project accomplishments.

Qualifications/Requirements

• Current enrollment in a full-time PhD program in Electrical Engineering, Material Science & Engineering or related fields at an accredited university

• Legal authorization to work in the U.S. .

• Must be willing to work from the GE Aerospace Research office in Niskayuna, NY.

• Minimum GPA 3.0 / 4.0 scale

 Desired Characteristics

• Experience with Silvaco and/or Synopsys tools for high-voltage semiconductor device simulation: Familiarity with industry-standard simulation software for designing and analyzing high-voltage SiC and UWBG semiconductor devices. Ability to perform detailed simulations to optimize device performance and ensure design robustness.

• Experience with device fabrication and parametric testing: Hands-on experience in semiconductor device fabrication processes, including lithography, etching, deposition, and doping techniques. Proficiency in conducting parametric testing to evaluate device characteristics such as breakdown voltage, leakage current, and on-resistance.

• Exceptional academic performance.  

• Excellent organizational, analytical, and problem-solving skills, and thorough attention to detail.

• Ability to adapt to change and willingness to be flexible in a global team environment.

• Effective presentation and technical communication skills; ability to articulate technical problems in clear and simple terms.

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The pay range for this position is $1,000-$2,000 USD weekly. The specific weekly rate offered to a candidate may be influenced by a variety of factors including the candidate’s experience, their education, and the work location.  GE provides travel reimbursement and housing stipend for qualified interns.