Intern - ADV. DRAM PI

Contribute to technology development activities to enable next generation DRAM, working on device components such as charge storage devices and thin-film transistors, among others. Optimize process flows and develop creative solutions to meet product requirements. Engage numerous cross-functional teams including process development, product engineering, design, probe, and yield enhancement to arrive at solutions for performance and yield issues. Design and run experiments in the R&D fab. Analyze inline, parametric, and probe data to evaluate operating and failure mechanisms, sources of noise and variability, and to apply fundamental principles for optimization of device performance and reliability. Summarize sophisticated problems, explain the actions necessary to address them, and drive the team to implement them. PhD candidate in Materials Science preferred but pHD in physics, chemical engineering acceptable. Focus on semiconductor device fabrication, electrical and material characterization preferred. Proficiency in data analysis and modeling preferred.