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Process / Senior Process Engineer - SiC Epitaxy, (APM), IME

salary Salary :

$3,000 - 6,000 monthly

icon briefcase Job Type : Full Time

Number of Applicants

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000+

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Job Description - Process / Senior Process Engineer - SiC Epitaxy, (APM), IME

Job Description

We're seeking a talented and passionate Process Engineer/Senior Process Engineer to join our epitaxy team, Advanced Process Modules (APM). The successful candidate will be responsible for SiC epitaxy process development for next-generation power devices. This position is within the National Semiconductor Translation and Innovation Centre (NSTIC) – Power Electronics.

Responsibilities:

  • Design and implement innovative SiC epitaxial processes on an industrial hot-wall CVD system, focusing on achieving exceptional dopant and thickness uniformity, as well as minimal extended defect density on 6- and 8-inch SiC substrates.
  • Perform metrology and characterization of SiC epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
  • Conduct optical and photoluminescence inspections of extended defects in SiC epilayers, including critical defects such as micropipes, carrots, triangles, downfalls, stacking faults, and basal plane dislocations.
  • Design experiments to minimize point and extended defect densities in SiC, with emphasis on enhancing SiC power device performance.
  • Develop advanced epitaxy processes for cutting-edge devices, such as SiC selective epitaxy and SiC trench-filling epitaxy.
  • Prepare technical presentations and papers for internal meetings, conferences, and journals and draft technical disclosures/IP.
  • Collaborate with IME's NSTIC – Power team to address key technical challenges in the SiC power electronics industry.
  • Contribute ideation for new funding proposals.
  • Perform all other reasonable duties as assigned.

Requirements:

  • Bachelor's or Master's degree in Electrical/Electronic Engineering, Materials Science, Physics, Chemistry or a related field.
  • 2 to 3 years of experience in semiconductor CVD process, preferrably epitaxy process development or manufacturing (Si, SiC GaN, or other semiconductor materials).
  • Strong knowledge of semiconductor processes (e.g., lithography, etching) and characterization techniques (e.g., SEM, TEM, XRD).
  • Excellent communication, collaboration, and self-motivation skills.
  • Avid technical reader, critical thinker, and strong team player.
  • Proficiency in data analysis and DOE tools (e.g., Excel, JMP, Origin) is an advantage.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

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